Int. J. of High Speed Elec. and Sys. - TOC alert

International Journal of High Speed Electronics and Systems (IJHSES)
Vol. 13, No. 3 (September 2003) 

SPECIAL ISSUE ON
ADVANCED DEVICE MODELING AND SIMULATION
EDITED BY TIBOR GRASSER 

Articles are available at http://www.worldscinet.com/ijhses.html

Table-of-contents:

INTRODUCTION

MODELING ELECTRON TRANSPORT IN MOSFET DEVICES: EVOLUTION AND STATE OF
THE ART
BY ANTONIO ABRAMO

PARTICLE MODELS FOR DEVICE SIMULATION
BY HANS KOSINA and MIHAIL NEDJALKOV

EFFECTIVE POTENTIALS AND QUANTUM FLUID MODELS: A THERMODYNAMIC
APPROACH
BY CHRISTIAN RINGHOFER, CARL GARDNER and DRAGICA VASILESKA

SELF-CONSISTENT MODELING OF MOSFET QUANTUM EFFECTS BY SOLVING THE
SCHRODINGER AND BOLTZMANN SYSTEM OF EQUATIONS
BY NEIL GOLDSMAN and CHUNG-KUANG HUANG

HYDRODYNAMIC MODELING OF RF NOISE FOR SILICON-BASED DEVICES
BY CHRISTOPH JUNGEMANN, BURKHARD NEINHUS and BERND MEINERZHAGEN

CARBON NANOTUBES AS A PERFECTLY CONDUCTING CYLINDER
BY TSUNEYA ANDO

HOT CARRIER EFFECTS WITHIN MACROSCOPIC TRANSPORT MODELS
BY TIBOR GRASSER, HANS KOSINA and SIEGFRIED SELBERHERR

For more information, go to http://www.worldscinet.com/ijhses.html