Re: Nonlinear I-V in semiconductor

[EMAIL PROTECTED] (rrk) wrote in message news:<[EMAIL PROTECTED]>...
> I used a compound semiconductor and a metal layer wishing to form a
> schottky barrier, but when I measured its I-V characteristics, it
> showed a diode-like behavior in either direction of current. The
> curves are exactly same in either polarity of the applied voltage. I
> think if a shottky junction was formed, it would not be the case. What
> is happening in my device? Any suggestion is appreciated.

Quite likely a poor contact, some sort of 
barrier that requires some voltage to tunnel 
through, not semiconductor but insulator. 
Polymer or oxide film on the contact 
floor can act like this.

Never underestimate the power of dirt.

Another possibility is the metal "poisoning"
the semiconductor by substitution, if you 
haven't used a barrier contact system, maybe
making an intermediate depleted layer that 
has to be inverted / accumulated to conduct.