Re: Leakage / static vs dynamic current

"Dwayne" <[EMAIL PROTECTED]> wrote in message
news:[EMAIL PROTECTED]
> Assuming you're asking about MOSFET leakage currents, then;

Dwayne, if you allow a followup just to confirm or clarify the picture...

> Source to Drain leakage-> No
That is what we had for a while already, and which is referred to as
"subthreshold-leakage", right?

Trending as expected for 90nm?

> Gate to Source leakage-> Yes

Referred as "gate-leakage", which was orders of magnitudes lower for
previous nodes, but is expected at 90nm in the same order of magnitude as
subthreshold leakage, right?

Any indications that this gate-leakage is actually exceeding the
expectations relative to subthreshold-leakage (Oder of magnitude higher
already??) at 90nm?

<snip>

TIA

Klaus