Re: Leakage / static vs dynamic current

"zach" <[EMAIL PROTECTED]> wrote in message
news:[EMAIL PROTECTED]
> "Klaus Fehrle" <[EMAIL PROTECTED]> wrote in message
news:<[EMAIL PROTECTED]>...
> > Hi Folks,
> >
> > hope someone can help with this one (in a way I would understand, i.e.
> > imagine you would try to explain to your teenage-daughter ;-) )
> >
> > Does Leakage occur only in transistor-shutoff-mode or does it add to
dynamic
> > current in operation?
> > IaW, is there a (negative) correlation of dynamic vs static current for
> > transistors in operation?
>
> Considering a whole device:
>
> By definition, the standby current (also referred to as Static Idd) is
> the operating current the device draws when in standby mode.
 Also, one
> could have some kind of [static] Iddq vector to further lower current
> (depends upon design and/or if that is written into the test program).
> If one is measuring Dynamic Idd (current drawn when the device is
> operating during some kind of functionality), then asking what the
> SIdd component during DIdd operation seems like a meaningless question
> because the transistors are no longer static, they are switching.

I think your question is just one of point-of-view?

Yes. The energetic point-of-view of it. Or, better said, the thermal point
of view is what i am aiming at. Do you think the SIdd component during DIdd
operation is  meaningless from this viewpoint?

Klaus