Re: Leakage / static vs dynamic current

"Klaus Fehrle" <[EMAIL PROTECTED]> wrote in message news:<[EMAIL PROTECTED]>...
> Hi Folks,
> 
> hope someone can help with this one (in a way I would understand, i.e.
> imagine you would try to explain to your teenage-daughter ;-) )
> 
> Does Leakage occur only in transistor-shutoff-mode or does it add to dynamic
> current in operation?
> IaW, is there a (negative) correlation of dynamic vs static current for
> transistors in operation?

Considering a whole device: 

By definition, the standby current (also referred to as Static Idd) is
the operating current the device draws when in standby mode. Also, one
could have some kind of [static] Iddq vector to further lower current
(depends upon design and/or if that is written into the test program).
If one is measuring Dynamic Idd (current drawn when the device is
operating during some kind of functionality), then asking what the
SIdd component during DIdd operation seems like a meaningless question
because the transistors are no longer static, they are switching. I
think your question is just one of point-of-view?